Atomically Thin Circuits on Silicon [ID 16025]

Description:

As Moore’s Law predicted, impending limitations in traditional CMOS technology led to a need for new innovation. The potential of two-dimensional (2D) materials, such as graphene, to both enhance existing technologies as well as provide new functionalities stimulated an explosion of research into these materials. In addition to characteristics such as extraordinarily high mobilities, semiconducting and superconducting behavior, ferromagnetism, and excellent thermal properties, many of these materials exhibit optical control of spin and valley degrees of freedom which may provide novel material-enabled functions in emerging areas such as spintronics or valleytronics. Despite this enormous potential, the inability to process material into working devices with any scalability is the largest impediment to capitalizing on the industrial promise of 2D materials. This technology has the potential to provide a scalable, front-end compatible, chemical vapor deposition (CVD) process to produce complex, conformal, as-grown, self-contacted 2D materials-based devices.

 

Benefits

* Simple and scalable process 

* Compatible with a variety of 2D materials (MoS2, MoSe2, WS2, WSe2, etc.)

* Complex geometries

* Heterostructured (multi-material) devices

 

 

Commercial Application

* CMOS front end compatible production of 2D materials-based devices

* Direct on-chip integration of sensors (optical, chemical, etc.)

* Flexible electronics

 

Published PCT application: WO 2017/210264

 

Printable Overview

 

 

 

Patent Information:
For Information, Contact:
Korie Sell
Technology Commercialization Manager
Ohio University
sellk@ohio.edu
Inventors:
Eric Stinaff
Martin Kordesch
Sudiksha Khadka
Keywords: